Proton radiation influence on SOI FinFET trade-off between transistor efficiency and unit gain frequency

dc.contributor.author	Caparroz, Luis F.V.
dc.contributor.author	Martino, Joao A.
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Claeys, Cor
dc.contributor.author	Agopian, Paula G.D.
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-10-23T10:11:19Z
dc.date.available	2021-10-23T10:11:19Z
dc.date.embargo	9999-12-31
dc.date.issued	2016
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/26388
dc.identifier.url	http://ieeexplore.ieee.org/document/7731357/
dc.source.conference	31st Symposium on Microelectronics Technology and Devices - SBMicro
dc.source.conferencedate	29/08/2016
dc.source.conferencelocation	Brasilia Brazil
dc.title	Proton radiation influence on SOI FinFET trade-off between transistor efficiency and unit gain frequency
dc.type	Proceedings paper
dspace.entity.type	Publication
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