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Valence band energy in confined Si1-xGex (0.28<x<0.93) layers

Date

2009
Journal article
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dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorStesmans, Andre
dc.contributor.authorSouriau, Laurent
dc.contributor.authorLoo, Roger
dc.contributor.authorMeuris, Marc
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-17T21:17:19Z
dc.date.available2021-10-17T21:17:19Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14880
dc.source.beginpage172106
dc.source.issue17
dc.source.journalApplied Physics Letters
dc.source.volume94
dc.title

Valence band energy in confined Si1-xGex (0.28

dc.typeJournal article
dspace.entity.typePublication
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