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InGaAs on GaAs based sensors for infrared sensing applications up to 2.3 μm

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dc.contributor.authorJohn, Joachim
dc.contributor.authorZimmermann, Lars
dc.contributor.authorDegroote, Stefan
dc.contributor.authorBorghs, Gustaaf
dc.contributor.authorVan Hoof, Chris
dc.contributor.authorNemeth, Stefan
dc.contributor.authorColin, Thierry
dc.contributor.authorHooylaerts, Peter
dc.contributor.imecauthorJohn, Joachim
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.imecauthorVan Hoof, Chris
dc.contributor.imecauthorNemeth, Stefan
dc.contributor.imecauthorHooylaerts, Peter
dc.contributor.orcidimecJohn, Joachim::0000-0003-0155-2854
dc.contributor.orcidimecVan Hoof, Chris::0000-0002-4645-3326
dc.date.accessioned2021-10-15T14:04:34Z
dc.date.available2021-10-15T14:04:34Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9100
dc.source.conferencePhotonics West
dc.source.conferencedate24/01/2004
dc.source.conferencelocationSan Jose, CA USA
dc.title

InGaAs on GaAs based sensors for infrared sensing applications up to 2.3 μm

dc.typeOral presentation
dspace.entity.typePublication
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