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Control of the Schottky barrier height in epitaxial magnetic MnAs/n-GaAs and MnSb/n-GaAs contacts

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dc.contributor.authorVan Roy, Wim
dc.contributor.authorRoelfsema, R. F. B.
dc.contributor.authorLiu, Zhiyu
dc.contributor.authorAkinaga, Hiroyuki
dc.contributor.authorMiyanishi, S.
dc.contributor.authorManago, T.
dc.contributor.authorBorghs, Gustaaf
dc.contributor.authorDe Boeck, Jo
dc.contributor.imecauthorVan Roy, Wim
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.imecauthorDe Boeck, Jo
dc.contributor.orcidimecVan Roy, Wim::0000-0003-3232-1987
dc.date.accessioned2021-10-14T14:04:13Z
dc.date.available2021-10-14T14:04:13Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4854
dc.source.conferenceSymposium on Spin Electronics; 3-6 July 2000; Halle, Germany.
dc.source.conferencelocation
dc.title

Control of the Schottky barrier height in epitaxial magnetic MnAs/n-GaAs and MnSb/n-GaAs contacts

dc.typeOral presentation
dspace.entity.typePublication
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