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Selective CVD growth of germanium-tin: a new approach for implementing stress in germanium-based MOSFETs

Date

2011-08
Journal article
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dc.contributor.authorLoo, Roger
dc.contributor.authorVincent, Benjamin
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-19T15:43:47Z
dc.date.available2021-10-19T15:43:47Z
dc.date.issued2011-08
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19334
dc.identifier.urlhttp://www.techdesignforums.com/eda/eda-topics/design-to-silicon/selective-cvd-growth-of-germanium-tin-a-new-approach-for-implem
dc.source.journalTech Design Forum
dc.title

Selective CVD growth of germanium-tin: a new approach for implementing stress in germanium-based MOSFETs

dc.typeJournal article
dspace.entity.typePublication
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