Spatially separated atomic layer deposition of Al2O3, a new option for high-throughput Si solar cell passivation

dc.contributor.author	Vermang, Bart
dc.contributor.author	Rothschild, Aude
dc.contributor.author	John, Joachim
dc.contributor.author	Poortmans, Jef
dc.contributor.author	Mertens, Robert
dc.contributor.imecauthor	Vermang, Bart
dc.contributor.imecauthor	John, Joachim
dc.contributor.imecauthor	Poortmans, Jef
dc.contributor.imecauthor	Mertens, Robert
dc.contributor.orcidimec	Vermang, Bart::0000-0003-2669-2087
dc.contributor.orcidimec	Poortmans, Jef::0000-0003-2077-2545
dc.date.accessioned	2021-10-19T21:10:21Z
dc.date.available	2021-10-19T21:10:21Z
dc.date.issued	2011
dc.identifier.issn	1062-7995
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/20075
dc.identifier.url	http://onlinelibrary.wiley.com/doi/10.1002/pip.1092/pdf
dc.source.beginpage	733
dc.source.endpage	739
dc.source.issue	6
dc.source.journal	Progress in Photovoltaics Research and Applications
dc.source.volume	19
dc.title	Spatially separated atomic layer deposition of Al2O3, a new option for high-throughput Si solar cell passivation
dc.type	Journal article
dspace.entity.type	Publication
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