Publication:
Current-voltage characteristics of gate oxides after hard breakdown
Date
| dc.contributor.author | Bearda, Twan | |
| dc.contributor.author | Woerlee, P. H. | |
| dc.contributor.author | Wallinga, H. | |
| dc.contributor.author | Mertens, Paul | |
| dc.contributor.imecauthor | Mertens, Paul | |
| dc.date.accessioned | 2021-10-14T16:36:55Z | |
| dc.date.available | 2021-10-14T16:36:55Z | |
| dc.date.issued | 2001 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/5046 | |
| dc.source.beginpage | 212 | |
| dc.source.conference | Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials - SSDM; | |
| dc.source.conferencelocation | ||
| dc.source.endpage | 213 | |
| dc.title | Current-voltage characteristics of gate oxides after hard breakdown | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
| Files | ||
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