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Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment

Date

1996
Journal article
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dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorMaes, Herman
dc.contributor.authorJones, S. K.
dc.contributor.imecauthorDe Wolf, Ingrid
dc.date.accessioned2021-09-29T14:23:55Z
dc.date.available2021-09-29T14:23:55Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1175
dc.source.beginpage7148
dc.source.endpage7156
dc.source.issue9
dc.source.journalJournal of Applied Physics
dc.source.volume79
dc.title

Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment

dc.typeJournal article
dspace.entity.typePublication
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