Publication:

Quantitative retention model for filamentary oxide-based resistive RAM

Date

2017
Journal article
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dc.contributor.authorDegraeve, Robin
dc.contributor.authorChen, Michael
dc.contributor.authorCelano, Umberto
dc.contributor.authorFantini, Andrea
dc.contributor.authorGoux, Ludovic
dc.contributor.authorLinten, Dimitri
dc.contributor.authorKar, Gouri Sankar
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorCelano, Umberto
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecCelano, Umberto::0000-0002-2856-3847
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.accessioned2021-10-24T04:06:22Z
dc.date.available2021-10-24T04:06:22Z
dc.date.issued2017
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28200
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0167931717301788
dc.source.beginpage38
dc.source.endpage41
dc.source.journalMicroelectronic Engineering
dc.source.volume178
dc.title

Quantitative retention model for filamentary oxide-based resistive RAM

dc.typeJournal article
dspace.entity.typePublication
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