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Analytical Markov Model to Calculate TDDB at Any Voltage and Temperature Stress Condition

 
dc.contributor.authorVici, Andrea
dc.contributor.authorDegraeve, Robin
dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorRoussel, Philippe
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorVici, Andrea
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDegraeve, Robin::0000-0002-4609-5573
dc.contributor.orcidimecVici, Andrea::0000-0002-3614-9590
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.date.accessioned2023-12-15T08:03:16Z
dc.date.available2023-12-03T17:03:02Z
dc.date.available2023-12-15T08:03:16Z
dc.date.issued2023
dc.identifier.doi10.1109/TED.2023.3326430
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43218
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage6512
dc.source.endpage6519
dc.source.issue12
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages8
dc.source.volume70
dc.subject.keywordsULTRATHIN SILICON DIOXIDE
dc.subject.keywordsSUBSTRATE-HOT-ELECTRON
dc.subject.keywordsOXIDE BREAKDOWN
dc.subject.keywordsTRAP GENERATION
dc.subject.keywordsGATE
dc.subject.keywordsRELIABILITY
dc.subject.keywordsDEGRADATION
dc.subject.keywordsPREDICTION
dc.subject.keywordsDEPENDENCE
dc.subject.keywordsPHYSICS
dc.title

Analytical Markov Model to Calculate TDDB at Any Voltage and Temperature Stress Condition

dc.typeJournal article
dspace.entity.typePublication
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