Publication:

Experimental investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology

Date

2010
Proceedings Paper
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dc.contributor.authorAvolio, G.
dc.contributor.authorRaffo, A.
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorVadala, V.
dc.contributor.authorDi Falco, S.
dc.contributor.authorLorenz, Anne
dc.contributor.authorDe Raedt, Walter
dc.contributor.authorNauwelaers, Bart
dc.contributor.authorVannini, G.
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorDe Raedt, Walter
dc.contributor.imecauthorNauwelaers, Bart
dc.contributor.orcidimecDe Raedt, Walter::0000-0002-7117-7976
dc.date.accessioned2021-10-18T15:16:52Z
dc.date.available2021-10-18T15:16:52Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16683
dc.source.conferenceWorkshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits - INMMiC
dc.source.conferencedate26/04/2010
dc.source.conferencelocationGoteborg Sweden
dc.title

Experimental investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology

dc.typeProceedings paper
dspace.entity.typePublication
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