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Understanding ambipolar transport in MoS2 field effect transistors: the substrate is the key

 
dc.contributor.authorKoladi Mootheri, Vivek
dc.contributor.authorLeonhardt, Alessandra
dc.contributor.authorVerreck, Devin
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorHuyghebaert, Cedric
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorRadu, Iuliana
dc.contributor.authorLin, Dennis
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorKoladi Mootheri, Vivek
dc.contributor.imecauthorLeonhardt, Alessandra
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorHuyghebaert, Cedric
dc.contributor.imecauthorde Gendt, Stefan
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMootheri, Vivek::0000-0002-1373-8405
dc.contributor.orcidimecHuyghebaert, Cedric::0000-0001-6043-7130
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecKoladi Mootheri, Vivek::0000-0002-1373-8405
dc.date.accessioned2022-02-18T14:01:01Z
dc.date.available2022-02-18T14:01:01Z
dc.date.issued2021
dc.identifier.doi10.1088/1361-6528/abd27a
dc.identifier.issn0957-4484
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38896
dc.publisherIOP PUBLISHING LTD
dc.source.beginpage135202
dc.source.issue13
dc.source.journalNANOTECHNOLOGY
dc.source.numberofpages9
dc.source.volume32
dc.subject.keywordsHEXAGONAL BORON-NITRIDE
dc.subject.keywordsCONTACT
dc.subject.keywordsBARRIER
dc.title

Understanding ambipolar transport in MoS2 field effect transistors: the substrate is the key

dc.typeJournal article
dspace.entity.typePublication
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