Publication:

TSV process-induced MOS reliability degradation

Date

2018-03
Proceedings Paper
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dc.contributor.authorLi, Yunlong
dc.contributor.authorStucchi, Michele
dc.contributor.authorVan Huylenbroeck, Stefaan
dc.contributor.authorVan der Plas, Geert
dc.contributor.authorBeyer, Gerald
dc.contributor.authorBeyne, Eric
dc.contributor.authorCroes, Kristof
dc.contributor.imecauthorLi, Yunlong
dc.contributor.imecauthorStucchi, Michele
dc.contributor.imecauthorVan Huylenbroeck, Stefaan
dc.contributor.imecauthorVan der Plas, Geert
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorBeyne, Eric
dc.contributor.imecauthorCroes, Kristof
dc.contributor.orcidimecLi, Yunlong::0000-0003-4791-4013
dc.contributor.orcidimecVan Huylenbroeck, Stefaan::0000-0001-9978-3575
dc.contributor.orcidimecVan der Plas, Geert::0000-0002-4975-6672
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.contributor.orcidimecCroes, Kristof::0000-0002-3955-0638
dc.date.accessioned2021-10-25T22:03:05Z
dc.date.available2021-10-25T22:03:05Z
dc.date.issued2018-03
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31182
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8353610/
dc.source.beginpage5B.5-1
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate11/03/2018
dc.source.conferencelocationBurlingame, CA USA
dc.source.endpage5B.5-5
dc.title

TSV process-induced MOS reliability degradation

dc.typeProceedings paper
dspace.entity.typePublication
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