Local arrangement of substitutional C atoms and the thermal stability of epitaxial Si:C(P) grown by CVD

dc.contributor.author	Dhayalan, Sathish Kumar
dc.contributor.author	Nuytten, Thomas
dc.contributor.author	Loo, Roger
dc.contributor.author	Rosseel, Erik
dc.contributor.author	Hikavyy, Andriy
dc.contributor.author	Shimura, Yosuke
dc.contributor.author	Vandervorst, Wilfried
dc.contributor.imecauthor	Nuytten, Thomas
dc.contributor.imecauthor	Loo, Roger
dc.contributor.imecauthor	Rosseel, Erik
dc.contributor.imecauthor	Hikavyy, Andriy
dc.contributor.imecauthor	Vandervorst, Wilfried
dc.contributor.orcidimec	Nuytten, Thomas::0000-0002-5921-6928
dc.contributor.orcidimec	Loo, Roger::0000-0003-3513-6058
dc.contributor.orcidimec	Hikavyy, Andriy::0000-0002-8201-075X
dc.date.accessioned	2021-10-24T04:17:03Z
dc.date.available	2021-10-24T04:17:03Z
dc.date.issued	2017-11
dc.identifier.issn	2162-8769
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/28241
dc.identifier.url	http://jss.ecsdl.org/content/6/12/P755.full.pdf+html?sid=b512b0ef-afd4-402f-8187-fe20a970c676
dc.source.beginpage	P755
dc.source.endpage	P759
dc.source.issue	12
dc.source.journal	ECS Journal of Solid State Science and Technology
dc.source.volume	6
dc.title	Local arrangement of substitutional C atoms and the thermal stability of epitaxial Si:C(P) grown by CVD
dc.type	Journal article
dspace.entity.type	Publication
Files
Publication available in collections:	Articles

Date