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Investigation of intragrain defects in pc-Si layers obtained by aluminium-induced crystallization: comparison of layers made by low and high temperature epitaxy

 
dc.contributor.authorVan Gestel, Dries
dc.contributor.authorDogan, Pinar
dc.contributor.authorGordon, Ivan
dc.contributor.authorBender, Hugo
dc.contributor.authorLee, K.Y.
dc.contributor.authorBeaucarne, Guy
dc.contributor.authorGall, Stefan
dc.contributor.authorPoortmans, Jef
dc.contributor.imecauthorGordon, Ivan
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecGordon, Ivan::0000-0002-0713-8403
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.accessioned2021-10-18T04:09:42Z
dc.date.available2021-10-18T04:09:42Z
dc.date.issued2009
dc.identifier.doi10.1016/j.mseb.2009.03.006
dc.identifier.issn0921-5107
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16386
dc.identifier.urlhttp://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TXF-4VYW1JB-1&_user=799533&_coverDate=03%2F15%2F2009&_alid=927606698&
dc.source.beginpage134
dc.source.endpage137
dc.source.journalMaterials Science and Engineering B
dc.source.volume159-160
dc.title

Investigation of intragrain defects in pc-Si layers obtained by aluminium-induced crystallization: comparison of layers made by low and high temperature epitaxy

dc.typeJournal article
dspace.entity.typePublication
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