Electron barrier height at CuxTe1-x/Al2O3 interfaces of conducting bridgememory stacks

dc.contributor.author	Afanasiev, Valeri
dc.contributor.author	De Stefano, Francesca
dc.contributor.author	Houssa, Michel
dc.contributor.author	Stesmans, Andre
dc.contributor.author	Goux, Ludovic
dc.contributor.author	Opsomer, Karl
dc.contributor.author	Kittl, Jorge
dc.contributor.author	Jurczak, Gosia
dc.contributor.imecauthor	Afanasiev, Valeri
dc.contributor.imecauthor	De Stefano, Francesca
dc.contributor.imecauthor	Houssa, Michel
dc.contributor.imecauthor	Stesmans, Andre
dc.contributor.imecauthor	Goux, Ludovic
dc.contributor.imecauthor	Opsomer, Karl
dc.contributor.imecauthor	Jurczak, Gosia
dc.contributor.orcidimec	Houssa, Michel::0000-0003-1844-3515
dc.contributor.orcidimec	Goux, Ludovic::0000-0002-1276-2278
dc.date.accessioned	2021-10-21T06:42:04Z
dc.date.available	2021-10-21T06:42:04Z
dc.date.issued	2013
dc.identifier.issn	0040-6090
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/21952
dc.source.beginpage	34
dc.source.endpage	37
dc.source.journal	Thin Solid Films
dc.source.volume	533
dc.title	Electron barrier height at CuxTe1-x/Al2O3 interfaces of conducting bridgememory stacks
dc.type	Journal article
dspace.entity.type	Publication
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