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TiSi(Ge) contacts formed at low temperature achieving around 2x10-9 $Xcm2 contact resistivities to p-SiGe

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2053 since deposited on 2021-10-24
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Acq. date: 2026-10-06

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2053 since deposited on 2021-10-24
3last month
3last week
Acq. date: 2026-10-06

Citations