Publication:

TiSi(Ge) contacts formed at low temperature achieving around 2x10-9 $Xcm2 contact resistivities to p-SiGe

Date

2017

Journal article

Simple item page Full metadata Statistics

Files

34952.pdf 2.21 MB

Author(s)

;

Schaekers, Marc

;

;

;

Everaert, Jean-Luc

;

Horiguchi, Naoto

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;

;

Collaert, Nadine

;

De Meyer, Kristin

Journal

IEEE Transactions on Electron Devices

Statistics

2044 since deposited on 2021-10-24

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Acq. date: 2026-04-06