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TiSi(Ge) contacts formed at low temperature achieving around 2x10-9 $Xcm2 contact resistivities to p-SiGe
Publication:
TiSi(Ge) contacts formed at low temperature achieving around 2x10-9 $Xcm2 contact resistivities to p-SiGe
Date
2017
Journal article
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34952.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Yu, Hao
;
Schaekers, Marc
;
Zhang, Jian
;
Wang, Linlin
;
Everaert, Jean-Luc
;
Horiguchi, Naoto
;
Jiang, Yu-Long
;
Mocuta, Dan
;
Collaert, Nadine
;
De Meyer, Kristin
Journal
IEEE Transactions on Electron Devices
Abstract
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2033
since deposited on 2021-10-24
Acq. date: 2025-10-23
Citations
Metrics
Views
2033
since deposited on 2021-10-24
Acq. date: 2025-10-23
Citations