Publication:

Focus sensitivity of CD extreme values demonstrated on a 40 nm pitch DRAM hexagonal contact hole use case printed with 0.33 NA EUV lithography

Date

 
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0001-6824-5643
cris.virtualsource.departmentb9d9fbbb-4c59-4a25-b8ec-de76b9021916
cris.virtualsource.orcidb9d9fbbb-4c59-4a25-b8ec-de76b9021916
dc.contributor.authorFrommhold, Andreas
dc.contributor.authorSlachter, Bram
dc.contributor.authorChen, Jerem
dc.contributor.authorRispens, Gijsbert
dc.date.accessioned2026-09-03T14:50:12Z
dc.date.available2026-09-03T14:50:12Z
dc.date.createdwos2026
dc.date.issued2026
dc.description.abstractThe effect of exposure defocus on the extreme values of the CD distribution of a DRAM hexagonal contact hole use case (capacitor patterning) was studied. Yield-relevant numbers of contact hole CD measurements were extracted from images collected with an e-beam inspection tool capable of massive data collection. The resultant CD distributions were analyzed for their focus sensitivity. It was found that the tails of the distributions (extreme values) respond stronger to defocus than the mean or 3-sigma. A statistical analysis of the extreme values was performed using either the raw data or analytically using a model distribution fitted to the data sets. When the available CD budget is based on the extreme values (99% spec) rather than the average CD and LCDU the focus range for which the process is in spec is impacted. Lastly, a methodology based on the extreme value distributions was introduced to evaluate the contribution of focus control over the CD budgets.
dc.identifier.doi10.1117/12.3090162
dc.identifier.isbn978-1-5106-9908-3
dc.identifier.issn0277-786X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/60214
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherSPIE-INT SOC OPTICAL ENGINEERING
dc.source.beginpage1398131
dc.source.conferenceMetrology, Inspection, and Process Control XL
dc.source.conferencedate2026-02-22
dc.source.conferencelocationSan Jose
dc.source.journalMETROLOGY, INSPECTION, AND PROCESS CONTROL XL, PT 1
dc.source.numberofpages7
dc.title

Focus sensitivity of CD extreme values demonstrated on a 40 nm pitch DRAM hexagonal contact hole use case printed with 0.33 NA EUV lithography

dc.typeProceedings paper
dspace.entity.typePublication
imec.internal.crawledAt2026-07-14
imec.internal.sourcecrawler
imec.internal.wosCreatedAt2026-07-14
Files
Publication available in collections: