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Poly-silicon wet removal for replacement gate integration scheme: impact of process parameters on the removal rate

Date

2010
Meeting abstract
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dc.contributor.authorSebaai, Farid
dc.contributor.authorVeloso, Anabela
dc.contributor.authorClaes, Martine
dc.contributor.authorDevriendt, Katia
dc.contributor.authorAbsil, Philippe
dc.contributor.authorMertens, Paul
dc.contributor.authorDe Gendt, Stefan
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-18T21:24:24Z
dc.date.available2021-10-18T21:24:24Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17964
dc.source.beginpage133
dc.source.conference10th International Symposium on Ultra-Clean Processing of Semiconductor Devices - UCPSS
dc.source.conferencedate19/09/2010
dc.source.conferencelocationOostende Belgium
dc.source.endpage134
dc.title

Poly-silicon wet removal for replacement gate integration scheme: impact of process parameters on the removal rate

dc.typeMeeting abstract
dspace.entity.typePublication
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