Publication:

AlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon(111) substrates with high electron mobility

Date

2012
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dc.contributor.authorCheng, Kai
dc.contributor.authorLiang, Hu
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorGeens, Karen
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorSrivastava, Puneet
dc.contributor.authorKang, Xuanwu
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorDekoster, Johan
dc.contributor.authordel Agua Borniquel, Jose Ignacio
dc.contributor.authorJun, Sung Won
dc.contributor.authorChung, Hua
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthordel Agua Borniquel, Jose Ignacio
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-20T10:16:06Z
dc.date.available2021-10-20T10:16:06Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.issn1882-0778
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20450
dc.source.beginpage011002-1
dc.source.issue1
dc.source.journalApplied Physics Express
dc.source.volume5
dc.title

AlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon(111) substrates with high electron mobility

dc.typeJournal article
dspace.entity.typePublication
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