Publication:

Multiple-gate tunneling field effect transistors with sub-60mV/dec subthreshold slope

Date

2009
Proceedings Paper
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dc.contributor.authorLeonelli, Daniele
dc.contributor.authorVandooren, Anne
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVerhulst, Anne
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorLeonelli, Daniele
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-17T23:54:24Z
dc.date.available2021-10-17T23:54:24Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15689
dc.source.beginpage767
dc.source.conferenceExtended Abstracts Solid State Devices and Materials Conference - SSDM
dc.source.conferencedate7/10/2009
dc.source.conferencelocationSendai Japan
dc.source.endpage768
dc.title

Multiple-gate tunneling field effect transistors with sub-60mV/dec subthreshold slope

dc.typeProceedings paper
dspace.entity.typePublication
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