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245/243GHz, 9.2/10.5dBm Saturated Output Power, 4.6/2.8% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-and 4-way Power Combining

 
dc.contributor.authorYun, Byeonghun
dc.contributor.authorPark, Dae-Woong
dc.contributor.authorChoi, Kyung-Sik
dc.contributor.authorSong, Ho-Jin
dc.contributor.authorLee, Sang-Gug
dc.contributor.imecauthorPark, Dae-Woong
dc.contributor.orcidimecPark, Dae-Woong::0000-0003-2755-3935
dc.date.accessioned2022-09-27T07:48:01Z
dc.date.available2022-04-04T02:09:05Z
dc.date.available2022-09-27T07:48:01Z
dc.date.issued2021
dc.identifier.doi10.1109/A-SSCC53895.2021.9634180
dc.identifier.eisbn978-1-6654-4350-0
dc.identifier.issnna
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39575
dc.publisherIEEE
dc.source.conference17th IEEE Asian Solid-State Circuits Conference (A-SSCC) - Integrated Circuits and Systems for the Connection of Intelligent Things
dc.source.conferencedateNOV 07-10, 2021
dc.source.conferencelocationBusan
dc.source.journalna
dc.source.numberofpages3
dc.subject.keywordsWIDE-BAND
dc.subject.keywordsP-SAT
dc.title

245/243GHz, 9.2/10.5dBm Saturated Output Power, 4.6/2.8% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-and 4-way Power Combining

dc.typeProceedings paper
dspace.entity.typePublication
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