Enhanced photoelectrochemical activity of GaN by dry etching into nanopillar array

dc.contributor.author	Tseng, Peter
dc.contributor.author	Mehta, Bharat
dc.contributor.author	van Dorp, Dennis
dc.contributor.author	Lieten, Ruben
dc.contributor.author	Vereecken, Philippe
dc.contributor.author	Borghs, Gustaaf
dc.contributor.imecauthor	van Dorp, Dennis
dc.contributor.imecauthor	Lieten, Ruben
dc.contributor.imecauthor	Vereecken, Philippe
dc.contributor.imecauthor	Borghs, Gustaaf
dc.contributor.orcidimec	van Dorp, Dennis::0000-0002-1085-4232
dc.contributor.orcidimec	Vereecken, Philippe::0000-0003-4115-0075
dc.date.accessioned	2021-10-21T12:55:58Z
dc.date.available	2021-10-21T12:55:58Z
dc.date.embargo	9999-12-31
dc.date.issued	2013
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/23192
dc.identifier.url	http://ecst.ecsdl.org/content/53/9/29.short
dc.source.beginpage	29
dc.source.conference	Hydrogen Production, Conversion and Storage 4
dc.source.conferencedate	12/05/2013
dc.source.conferencelocation	Toronto Canada
dc.source.endpage	35
dc.title	Enhanced photoelectrochemical activity of GaN by dry etching into nanopillar array
dc.type	Proceedings paper
dspace.entity.type	Publication
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