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Accurate modelling of the accumulation region of a double barrier resonant tunnelling diode

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dc.contributor.authorHendriks, Marton
dc.contributor.authorMagnus, Wim
dc.contributor.authorvan de Roer, T. G.
dc.contributor.imecauthorMagnus, Wim
dc.date.accessioned2021-09-29T14:33:02Z
dc.date.available2021-09-29T14:33:02Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1253
dc.source.beginpage703
dc.source.endpage712
dc.source.journalSolid-State Electronics
dc.source.volume39
dc.title

Accurate modelling of the accumulation region of a double barrier resonant tunnelling diode

dc.typeJournal article
dspace.entity.typePublication
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