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Stochastic modeling of hot-carrier degradation in nFinFETs considering the impact of random traps and random dopants
Publication:
Stochastic modeling of hot-carrier degradation in nFinFETs considering the impact of random traps and random dopants
Date
2019
Proceedings Paper
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44630.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Makarov, Alexander
;
Kaczer, Ben
;
Roussel, Philippe
;
Vaisman Chasin, Adrian
;
Vandemaele, Michiel
;
Hellings, Geert
;
El-Sayed, Al-Moatasem
;
Jech, Markus
;
Grasser, Tibor
;
Linten, Dimitri
;
Tyaginov, Stanislav
Journal
Abstract
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1986
since deposited on 2021-10-27
452
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Acq. date: 2025-10-24
Citations
Metrics
Views
1986
since deposited on 2021-10-27
452
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations