Publication:

In0.53Ga0.47As quantum-well MOSFET with source-drain regrowth for low power logic applications

Date

2014
Proceedings Paper
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dc.contributor.authorZhou, Daisy
dc.contributor.authorAlian, AliReza
dc.contributor.authorMols, Yves
dc.contributor.authorRooyackers, Rita
dc.contributor.authorLin, Dennis
dc.contributor.authorIvanov, Tsvetan
dc.contributor.authorPourghaderi, Mohammad Ali
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorZhou, Daisy
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorIvanov, Tsvetan
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecIvanov, Tsvetan::0000-0003-3407-2742
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-22T09:00:19Z
dc.date.available2021-10-22T09:00:19Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24894
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6894419
dc.source.beginpage208
dc.source.conferenceIEEE International Symposium on VLSI Technology
dc.source.conferencedate9/06/2014
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage209
dc.title

In0.53Ga0.47As quantum-well MOSFET with source-drain regrowth for low power logic applications

dc.typeProceedings paper
dspace.entity.typePublication
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