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Key contributors for improvement of line width roughness, line edge roughness, and critical dimension uniformity: 15 nm half-pitch patterning with extreme ultraviolet and self-aligned double patterning

Date

2013-09
Journal article
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dc.contributor.authorXu, Kaidong
dc.contributor.authorSouriau, Laurent
dc.contributor.authorHellin, David
dc.contributor.authorVersluijs, Janko
dc.contributor.authorWong, Patrick
dc.contributor.authorVangoidsenhoven, Diziana
dc.contributor.authorVandenbroeck, Nadia
dc.contributor.authorDekkers, Harold
dc.contributor.authorShi, Xiaoping
dc.contributor.authorAlbert, Johan
dc.contributor.authorTan, Chi Lim
dc.contributor.authorVertommen, Johan
dc.contributor.authorCoenegrachts, Bart
dc.contributor.authorOrain, Isabelle
dc.contributor.authorKimura, Yoshie
dc.contributor.authorWiaux, Vincent
dc.contributor.authorBoullart, Werner
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorHellin, David
dc.contributor.imecauthorVersluijs, Janko
dc.contributor.imecauthorWong, Patrick
dc.contributor.imecauthorVangoidsenhoven, Diziana
dc.contributor.imecauthorVandenbroeck, Nadia
dc.contributor.imecauthorDekkers, Harold
dc.contributor.imecauthorCoenegrachts, Bart
dc.contributor.imecauthorWiaux, Vincent
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecWong, Patrick::0000-0003-3605-9680
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.date.accessioned2021-10-21T14:46:03Z
dc.date.available2021-10-21T14:46:03Z
dc.date.embargo9999-12-31
dc.date.issued2013-09
dc.identifier.issn1537-1646
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23410
dc.identifier.urlhttp://nanolithography.spiedigitallibrary.org/article.aspx?articleid=1735267
dc.source.beginpage41302
dc.source.issue4
dc.source.journalJournal of Micro/Nanolithography MEMS and MOEMS
dc.source.volume12
dc.title

Key contributors for improvement of line width roughness, line edge roughness, and critical dimension uniformity: 15 nm half-pitch patterning with extreme ultraviolet and self-aligned double patterning

dc.typeJournal article
dspace.entity.typePublication
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