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Growth evolution of N-polar Indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer

Date

2020
Journal article
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dc.contributor.authorChauhan, Prerna
dc.contributor.authorHasenöhrl, Stanislav
dc.contributor.authorMinj, Albert
dc.contributor.authorChauvat, Marie Pierre
dc.contributor.authorRuterana, Pierre
dc.contributor.authorKuzmík, Jan
dc.contributor.imecauthorMinj, Albert
dc.contributor.orcidimecMinj, Albert::0000-0003-0878-3276
dc.date.accessioned2021-10-28T20:39:42Z
dc.date.available2021-10-28T20:39:42Z
dc.date.issued2020
dc.identifier.issn0169-4332
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34882
dc.identifier.urlhttps://doi.org/10.1016/j.apsusc.2019.144086
dc.source.beginpage144086
dc.source.journalApplied Surface Science
dc.source.volume502
dc.title

Growth evolution of N-polar Indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer

dc.typeJournal article
dspace.entity.typePublication
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