Publication:

Boosting the Sensitivity of the Nanopore Field-Effect Transistor to Translocating Single Molecules

Date

2022
Journal article
https://doi.org/10.1109/JSEN.2022.3149345
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dc.contributor.authorVerhulst, Anne
dc.contributor.authorRuic, Dino
dc.contributor.authorWillems, Kherim
dc.contributor.authorVan Dorpe, Pol
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorRuic, Dino
dc.contributor.imecauthorWillems, Kherim
dc.contributor.imecauthorVan Dorpe, Pol
dc.contributor.orcidimecWillems, Kherim::0000-0003-1341-1581
dc.contributor.orcidimecVan Dorpe, Pol::0000-0003-0918-1664
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecRuic, Dino::0000-0001-8081-2751
dc.date.accessioned2022-04-26T08:11:56Z
dc.date.available2022-04-04T02:09:13Z
dc.date.available2022-04-07T08:56:05Z
dc.date.available2022-04-26T08:11:56Z
dc.date.embargo2022-03-15
dc.date.issued2022
dc.description.wosFundingTextThis work was supported by the imec's Industrial Affiliation Program.
dc.identifier.doi10.1109/JSEN.2022.3149345
dc.identifier.issn1530-437X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39581
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage5732
dc.source.endpage5742
dc.source.issue6
dc.source.journalIEEE SENSORS JOURNAL
dc.source.numberofpages11
dc.source.volume22
dc.subject.disciplineApplied physics
dc.subject.disciplineElectrical & electronic engineering
dc.subject.disciplineMultidisciplinary physics
dc.subject.disciplinePhysics of solids, fluids and plasmas
dc.subject.keywordsDNA
dc.subject.keywordsNANOPORE
dc.subject.keywordsNPFET
dc.subject.keywordsTRANSISTOR
dc.subject.keywordsSIMULATION
dc.subject.keywordsNPFETFOAM
dc.title

Boosting the Sensitivity of the Nanopore Field-Effect Transistor to Translocating Single Molecules

dc.typeJournal article
dspace.entity.typePublication
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