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VFTLP characteristics of ESD protection diodes in advanced bulk FinFET technology

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dc.contributor.authorChen, Shih-Hung
dc.contributor.authorLinten, Dimitri
dc.contributor.authorScholz, Mirko
dc.contributor.authorHellings, Geert
dc.contributor.authorBoschke, Roman
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned2021-10-22T18:40:45Z
dc.date.available2021-10-22T18:40:45Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25069
dc.source.beginpage9-1A3
dc.source.conferenceEOS/ESD Symposium
dc.source.conferencedate27/09/2015
dc.source.conferencelocationReno, NV USA
dc.title

VFTLP characteristics of ESD protection diodes in advanced bulk FinFET technology

dc.typeProceedings paper
dspace.entity.typePublication
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