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DLTS study on deep levels formed in plasma hydrogenated and subsequently annealed silicon

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dc.contributor.authorHuang, Y.L.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorJob, R.
dc.contributor.authorMa, Y.
dc.contributor.authorDüngen, W.
dc.contributor.authorFahrner, W.R.
dc.contributor.authorVersluys, J.
dc.contributor.authorClauws, P.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-16T02:12:44Z
dc.date.available2021-10-16T02:12:44Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10621
dc.source.beginpage547
dc.source.conferenceGettering and Defect Engineering in Semiconductor Technology XI. Proceedings of the 11th International Autumn Meeting
dc.source.conferencedate25/09/2005
dc.source.conferencelocationGiens France
dc.source.endpage552
dc.title

DLTS study on deep levels formed in plasma hydrogenated and subsequently annealed silicon

dc.typeProceedings paper
dspace.entity.typePublication
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