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Quantitative observation of Ge-segregation during the Si-passivation of Ge-surfaces.

Date

2010
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dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorKoelling, Sebastian
dc.contributor.authorVincent, Benjamin
dc.contributor.authorCaymax, Matty
dc.contributor.authorDouhard, Bastien
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDouhard, Bastien
dc.date.accessioned2021-10-18T23:24:58Z
dc.date.available2021-10-18T23:24:58Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18225
dc.source.conferenceMRS Spring Meeting Symposium I: Materials for End-of-Roadmap Scaling of CMOS
dc.source.conferencedate5/04/2010
dc.source.conferencelocationSan Francisco, CA USA
dc.title

Quantitative observation of Ge-segregation during the Si-passivation of Ge-surfaces.

dc.typeOral presentation
dspace.entity.typePublication
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