Publication:

Uniform strain in heterostructure tunnel field-effect transistors

Date

2016
Journal article
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dc.contributor.authorVerreck, Devin
dc.contributor.authorVerhulst, Anne
dc.contributor.authorVan de Put, Maarten
dc.contributor.authorSoree, Bart
dc.contributor.authorCollaert, Nadine
dc.contributor.authorMocuta, Anda
dc.contributor.authorThean, Aaron
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned2021-10-23T16:48:47Z
dc.date.available2021-10-23T16:48:47Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27544
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7393778
dc.source.beginpage337
dc.source.endpage340
dc.source.issue3
dc.source.journalIEEE Electron Device Letters
dc.source.volume37
dc.title

Uniform strain in heterostructure tunnel field-effect transistors

dc.typeJournal article
dspace.entity.typePublication
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