Publication:

2 μm Pitch Direct Die-To-Wafer Hybrid Bonding Using Surface Protection During Wafer Thinning And Die Singulation

Date

2025-01-01
Proceedings Paper
https://doi.org/10.1109/ECTC51687.2025.00054
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dc.contributor.authorLin, Ye
dc.contributor.authorBex, Pieter
dc.contributor.authorSuhard, Samuel
dc.contributor.authorZhang, Boyao
dc.contributor.authorUlu Okudur, Fulya
dc.contributor.authorDiaz De Zerio, Amaia
dc.contributor.authorReddy, Naveen
dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorLi, Yanan
dc.contributor.authorJourdain, Anne
dc.contributor.authorBeyer, Gerald
dc.contributor.authorBeyne, Eric
dc.date.accessioned2026-01-22T08:27:00Z
dc.date.available2026-01-22T08:27:00Z
dc.date.createdwos2025-10-31
dc.date.issued2025-01-01
dc.description.abstractTo preserve the bonding surface quality, this paper proposes and demonstrates the feasibility of incorporating an inorganic protective layer in the direct die-to-wafer (D2W) hybrid bonding flow. The bonding surface is found well preserved even after wafer thinning and die singulation: Cu recess is kept ~2 nm, which is comparable to 1.5 nm after the initial CMP. Transmission electron microscopy (TEM) inspection at the bonding interface confirms seamless bonding of SiCN-SiCN and Cu-Cu. The best electrical results of the 2 μm pitch structures show Kelvin yield > 95% and the daisy chain yield > 80%, indicating effective surface protection.
dc.description.wosFundingTextThis work has been enabled in part by the NanoIC pilot line. The acquisition and operation are jointly funded by the Chips Joint Undertaking, through the European Union's Digital Europe (101183266) and Horizon Europe programs (101183277), as well as by the participating states Belgium (Flanders), France, Germany, Finland, Ireland and Romania. For more information, visit nanoic-project.eu.
dc.identifier.doi10.1109/ECTC51687.2025.00054
dc.identifier.isbn979-8-3315-3933-7
dc.identifier.issn0569-5503
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/58693
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherIEEE COMPUTER SOC
dc.source.beginpage272
dc.source.conference2025 IEEE 75TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC
dc.source.conferencedate2025-05-27
dc.source.conferencelocationDallas
dc.source.journal2025 IEEE 75TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC
dc.source.numberofpages5
dc.title

2 μm Pitch Direct Die-To-Wafer Hybrid Bonding Using Surface Protection During Wafer Thinning And Die Singulation

dc.typeProceedings paper
dspace.entity.typePublication
imec.internal.crawledAt2025-10-22
imec.internal.sourcecrawler
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