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Lifetime coniderations for high-energy proton irradiated Si p-n junction diodes

Date

1997
Proceedings Paper
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dc.contributor.authorSimoen, Eddy
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-09-30T09:33:36Z
dc.date.available2021-09-30T09:33:36Z
dc.date.embargo9999-12-31
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2148
dc.source.beginpage251
dc.source.conferenceProceedings of the 7th International Autumn Meeting : Gettering and Defect Engineering in Semiconductor Technology - GADEST '97
dc.source.conferencedate5/10/1997
dc.source.conferencelocationSpa Belgium
dc.source.endpage256
dc.title

Lifetime coniderations for high-energy proton irradiated Si p-n junction diodes

dc.typeProceedings paper
dspace.entity.typePublication
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