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Profiling different kind of generated defects at elevated temperatures in both SiO2 and high-k dielectrics

Date

2010
Proceedings Paper
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dc.contributor.authorSahhaf, Sahar
dc.contributor.authorDegraeve, Robin
dc.contributor.authorZahid, Mohammed
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorSahhaf, Sahar
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.date.accessioned2021-10-18T21:09:56Z
dc.date.available2021-10-18T21:09:56Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17930
dc.source.beginpage1252-I05-08
dc.source.conferenceMaterials for End-of-Roadmap Scaling of CMOS Devices
dc.source.conferencedate5/04/2010
dc.source.conferencelocationSan Francisco, CA USA
dc.title

Profiling different kind of generated defects at elevated temperatures in both SiO2 and high-k dielectrics

dc.typeProceedings paper
dspace.entity.typePublication
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