Publication:

Proton irradiation induced lattice defects in Si diodes and their effects on device performance

Date

1997
Proceedings Paper
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dc.contributor.authorOhyama, Hidenori
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorTakami, Y.
dc.contributor.authorHayama, Kiyoteru
dc.contributor.authorSunaga, H.
dc.contributor.authorKobayashi, K.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-09-30T09:22:37Z
dc.date.available2021-09-30T09:22:37Z
dc.date.embargo9999-12-31
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2071
dc.source.beginpage143
dc.source.conferenceCrystalline Defects and Contamination Control: Their Impact and Control in Device Manufacturing II
dc.source.conferencedate31/08/1997
dc.source.conferencelocationParis France
dc.source.endpage150
dc.title

Proton irradiation induced lattice defects in Si diodes and their effects on device performance

dc.typeProceedings paper
dspace.entity.typePublication
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