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Effect of mechanical strain on hydrogenated amorphous silicon thin-film transistors and compensation circuits on flexible substrates

Date

2017
Journal article
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dc.contributor.authorLee, Czang-Ho
dc.contributor.authorPapadopoulos, Nikolas
dc.contributor.authorSachdev, Manoj
dc.contributor.authorWong, William S.
dc.contributor.imecauthorPapadopoulos, Nikolas
dc.contributor.orcidimecPapadopoulos, Nikolas::0000-0001-7584-6009
dc.date.accessioned2021-10-24T07:36:07Z
dc.date.available2021-10-24T07:36:07Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28773
dc.identifier.urlhttps://ieeexplore.ieee.org/document/7893773/
dc.source.beginpage2016
dc.source.endpage2021
dc.source.issue5
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume64
dc.title

Effect of mechanical strain on hydrogenated amorphous silicon thin-film transistors and compensation circuits on flexible substrates

dc.typeJournal article
dspace.entity.typePublication
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