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SiGe or GeSn source/drain stressors on strained SiGe-channel pFETS: a TCAD study

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dc.contributor.authorEneman, Geert
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMitard, Jerome
dc.contributor.authorVincent, Benjamin
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-21T07:29:52Z
dc.date.available2021-10-21T07:29:52Z
dc.date.issued2013-04
dc.identifier.doi10.7567/JJAP.52.04CC01
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22312
dc.identifier.urlhttp://jjap.jsap.jp/link?JJAP/52/04CC01/
dc.source.beginpage04CC01
dc.source.issue4
dc.source.journalJapanese Journal of Applied Physics
dc.source.volume52
dc.title

SiGe or GeSn source/drain stressors on strained SiGe-channel pFETS: a TCAD study

dc.typeJournal article
dspace.entity.typePublication
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