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On the calculation of the quasi-bound-states energies and lifetimes in inverted MOS structures with ultrathin oxides and its application to the direct tunneling current

Date

2004
Journal article
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dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorMagnus, Wim
dc.contributor.authorSchoenmaker, Wim
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorMagnus, Wim
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-15T13:38:54Z
dc.date.available2021-10-15T13:38:54Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8979
dc.source.beginpage764
dc.source.endpage773
dc.source.issue5
dc.source.journalIEEE Trans. Electron Devices
dc.source.volume51
dc.title

On the calculation of the quasi-bound-states energies and lifetimes in inverted MOS structures with ultrathin oxides and its application to the direct tunneling current

dc.typeJournal article
dspace.entity.typePublication
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