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Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs

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dc.contributor.authorTsormpatzoglou, A.
dc.contributor.authorThassis, D.H.
dc.contributor.authorDimitriadis, C.A.
dc.contributor.authorGhibaudo, G.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorPananakakis, G.
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-19T19:56:10Z
dc.date.available2021-10-19T19:56:10Z
dc.date.issued2011
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19921
dc.source.beginpage31
dc.source.endpage34
dc.source.issue1
dc.source.journalSolid-State Electronics
dc.source.volume57
dc.title

Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs

dc.typeJournal article
dspace.entity.typePublication
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