Publication:

Synchrotron x-ray topography studies of epitaxial laterial overgrowth of GaN on sapphire

Date

1999
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorMcNally, P. J.
dc.contributor.authorO'Hare, M.
dc.contributor.authorTuomi, T.
dc.contributor.authorRantamaki, R.
dc.contributor.authorJacobs, Koen
dc.contributor.authorConsidine, L.
dc.contributor.authorDanilewsky, A. N.
dc.date.accessioned2021-10-14T11:30:26Z
dc.date.available2021-10-14T11:30:26Z
dc.date.embargo9999-12-31
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3666
dc.source.beginpage327
dc.source.conferenceWide-Bandgap Semiconductors for High-Power, High-Frequency and High- Temperature Applications
dc.source.conferencedate5/04/1999
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage332
dc.title

Synchrotron x-ray topography studies of epitaxial laterial overgrowth of GaN on sapphire

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
3632.pdf
Size:
372.34 KB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions