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Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer
Publication:
Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer
Date
2022
Proceedings Paper
https://doi.org/10.1109/ESSDERC55479.2022.9947147
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Alian, Alireza
;
Rodriguez, Raul
;
Yadav, Sachin
;
Peralagu, Uthayasankaran
;
Sibaja-Hernandez, Arturo
;
Putcha, Vamsi
;
Zhao, Ming
;
ElKashlan, Rana Y.
;
Vermeersch, Bjorn
;
Yu, Hao
;
Bury, Erik
;
Khaled, Ahmad
;
Collaert, Nadine
;
Parvais, Bertrand
Journal
na
Abstract
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1334
since deposited on 2023-02-09
Acq. date: 2025-10-26
Citations
Metrics
Views
1334
since deposited on 2023-02-09
Acq. date: 2025-10-26
Citations