Publication:

High Ge content SGOI substrates obtained by the Ge condensation technique:a template for growth of strained epitaxial Ge

Date

2007
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorSouriau, Laurent
dc.contributor.authorTerzieva, Valentina
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorClemente, Francesca
dc.contributor.authorBrijs, Bert
dc.contributor.authorMoussa, Alain
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.authorMeuris, Marc
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorTerzieva, Valentina
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-16T19:56:00Z
dc.date.available2021-10-16T19:56:00Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12934
dc.source.conference5th International Conference on Silicon Epitaxy and Heterostructures - ICSI-5
dc.source.conferencedate20/05/2007
dc.source.conferencelocationMarseille France
dc.title

High Ge content SGOI substrates obtained by the Ge condensation technique:a template for growth of strained epitaxial Ge

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections:
Conference contributions