Scaling the 3D bumps pitch from 20 to 10 μm, focusing on the wet Cu seed etch process development

dc.contributor.author	Suhard, Samuel
dc.contributor.author	Moussa, Alain
dc.contributor.author	Slabbekoorn, John
dc.contributor.author	Beirnaert, Filip
dc.contributor.author	De Preter, Inge
dc.contributor.author	Holsteyns, Frank
dc.contributor.imecauthor	Suhard, Samuel
dc.contributor.imecauthor	Moussa, Alain
dc.contributor.imecauthor	Slabbekoorn, John
dc.contributor.imecauthor	Beirnaert, Filip
dc.contributor.imecauthor	De Preter, Inge
dc.contributor.imecauthor	Holsteyns, Frank
dc.contributor.orcidimec	Moussa, Alain::0000-0002-6377-4199
dc.date.accessioned	2021-10-22T06:13:25Z
dc.date.available	2021-10-22T06:13:25Z
dc.date.issued	2014
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/24573
dc.identifier.url	http://www.scientific.net/SSP.219.237
dc.source.beginpage	237
dc.source.conference	Ultra Clean Processing of Semiconductor Surfaces XII - UCPSSXII
dc.source.conferencedate	21/09/2014
dc.source.conferencelocation	Brussels Belgium
dc.source.endpage	240
dc.title	Scaling the 3D bumps pitch from 20 to 10 μm, focusing on the wet Cu seed etch process development
dc.type	Proceedings paper
dspace.entity.type	Publication
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