Publication:
An effective model for analysing tunneling gate leakage currents through ultrathin oxides and high-k gate stacks from Si inversion layers
Date
| dc.contributor.author | Govoreanu, Bogdan | |
| dc.contributor.author | Blomme, Pieter | |
| dc.contributor.author | Henson, Kirklen | |
| dc.contributor.author | Van Houdt, Jan | |
| dc.contributor.author | De Meyer, Kristin | |
| dc.contributor.imecauthor | Govoreanu, Bogdan | |
| dc.contributor.imecauthor | Blomme, Pieter | |
| dc.contributor.imecauthor | Van Houdt, Jan | |
| dc.contributor.imecauthor | De Meyer, Kristin | |
| dc.contributor.orcidimec | Van Houdt, Jan::0000-0003-1381-6925 | |
| dc.date.accessioned | 2021-10-15T13:38:43Z | |
| dc.date.available | 2021-10-15T13:38:43Z | |
| dc.date.issued | 2004 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/8978 | |
| dc.source.beginpage | 617 | |
| dc.source.endpage | 625 | |
| dc.source.issue | 4 | |
| dc.source.journal | Solid-State Electronics | |
| dc.source.volume | 48 | |
| dc.title | An effective model for analysing tunneling gate leakage currents through ultrathin oxides and high-k gate stacks from Si inversion layers | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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