Highly uniform AlGaAs/GaAs and InGaAs(P)/InP structures grown in a multiwafer vertical rotating susceptor MOVPE reactor

dc.contributor.author	Zhang, X.
dc.contributor.author	Moerman, Ingrid
dc.contributor.author	Sys, Carl
dc.contributor.author	Demeester, Piet
dc.contributor.author	Crawley, J. A.
dc.contributor.author	Thrush, E. J.
dc.contributor.imecauthor	Moerman, Ingrid
dc.contributor.imecauthor	Demeester, Piet
dc.date.accessioned	2021-09-30T10:10:48Z
dc.date.available	2021-09-30T10:10:48Z
dc.date.embargo	9999-12-31
dc.date.issued	1997
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/2321
dc.source.beginpage	83
dc.source.endpage	87
dc.source.journal	Journal of Crystal Growth
dc.source.volume	170
dc.title	Highly uniform AlGaAs/GaAs and InGaAs(P)/InP structures grown in a multiwafer vertical rotating susceptor MOVPE reactor
dc.type	Journal article
dspace.entity.type	Publication
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