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Properties of p-n-diodes made in polysilicon layers with intermediate grain size

Date

1998
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dc.contributor.authorBeaucarne, Guy
dc.contributor.authorPoortmans, Jef
dc.contributor.authorCaymax, Matty
dc.contributor.authorNijs, Johan
dc.contributor.authorMertens, Robert
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMertens, Robert
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.accessioned2021-09-30T11:26:55Z
dc.date.available2021-09-30T11:26:55Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2380
dc.source.conferencePolyse '98 - Polycrystalline Semiconductors : Bulk Materials, Thin Films, and Devices; 13-18 September 1998; Schwäbisch Gmünd, Germany
dc.source.conferencelocation
dc.title

Properties of p-n-diodes made in polysilicon layers with intermediate grain size

dc.typeOral presentation
dspace.entity.typePublication
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