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Study of GaAs field-effect transistors with sub-o.25 micron gatelength

Date

1993
Dissertation
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtualsource.department0aeb31f8-d469-4bb6-9dc0-8d9ad67056ba
cris.virtualsource.orcid0aeb31f8-d469-4bb6-9dc0-8d9ad67056ba
dc.contributor.advisorDeclerck, G.
dc.contributor.authorJansen, Philippe
dc.date.accessioned2026-06-15T15:06:33Z
dc.date.available2026-06-15T15:06:33Z
dc.date.issued1993
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/59727
dc.provenance.editstepusermeghan.oneill@imec.be
dc.title

Study of GaAs field-effect transistors with sub-o.25 micron gatelength

dc.typePHD thesis
dspace.entity.typePublication
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