Defect generation in high-k gate dielectric stacks under electrical stress: the impact of hydrogen

dc.contributor.author	Houssa, Michel
dc.contributor.author	Pourtois, Geoffrey
dc.contributor.author	Stesmans, Andre
dc.contributor.author	Heyns, Marc
dc.contributor.imecauthor	Houssa, Michel
dc.contributor.imecauthor	Pourtois, Geoffrey
dc.contributor.imecauthor	Stesmans, Andre
dc.contributor.imecauthor	Heyns, Marc
dc.contributor.orcidimec	Houssa, Michel::0000-0003-1844-3515
dc.contributor.orcidimec	Pourtois, Geoffrey::0000-0003-2597-8534
dc.date.accessioned	2021-10-16T02:11:42Z
dc.date.available	2021-10-16T02:11:42Z
dc.date.issued	2005
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/10617
dc.source.beginpage	S2075
dc.source.endpage	S2088
dc.source.issue	21
dc.source.journal	Journal of Physics: Condensed Matter
dc.source.volume	17
dc.title	Defect generation in high-k gate dielectric stacks under electrical stress: the impact of hydrogen
dc.type	Journal article
dspace.entity.type	Publication
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